Prof. Maurizio De Crescenzi

Contact details

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Office: Physics Department

Tel: +39 06 72594547

Lab: +39 06 72594532

Fax: +39+06 2023507

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Research Activity

From 1979 his research activity has been focused on the study of the structural and electronic properties of surfaces (clean and interacting with chemisorbed species), and of metal/semiconductor interfaces by means of spectroscopic techniques such as Auger, XPS and Energy Loss in reflection and STM (Scanning Tunneling Microscopy) microscope.
During these years he has contributed actively to the development of some electron spectroscopic techniques as local surface structural tool, as the EELFS (Extended Energy Loss Fine Structure) and the EXFAS (Extended Fine Auger Structure). He has received for this several invited talks and oral presentations at topic Surface Science Conferences.
He has investigated the growth of nanostructures of Germanium/Silicon and Fe/Cu/Si ultrathin films through MBE process. Recently he has synthetized nanotubes of carbon and other materials, such as silicon, and they have been visualized through STM and AFM microscopy.He has been co-author or author of more than 200 international publications concerning electronic and structural properties of the condensed matter and applications of different electron scattering and absorption spectroscopies. He has written a book entitled: ”Electron Scattering and Related Spectroscopies” (World Scientific 1996) providing an overview of all spectroscopic techniques related to electron scattering phenomena. He is in the board of editors of the following international reviews: Journal of Physics (Condensed Matter), Surface Review and Letters, Journal of Electron Spectroscopy.

 

Recent Publication

[1] P. Castrucci, N. Pinto, L. Morresi, R. Gunnella, R. Murri, M. Scarselli, M. De Crescenzi, “Magnetic properties of thin MnGe films investigated by magnetic force microscopy”, Journal of Magnetism and Magnetic Materials 272-276, 1541 (2004).

[2] F. Ratto, F. Rosei, A. Locatelli, S. Cherifi, S. Fontana, S. Heun, P.-D. Szkutnik, A. Sgarlata, M. De Crescenzi, N. Motta, “Composition of Ge(Si) islands in the growth of Ge on Si(111) by x-ray spectromicroscopy”, Journal of Applied Physics 97, 043516 (2005).

[3] M. De Crescenzi, P. Castrucci, M. Scarselli, M. Diociaiuti, P. S. Chaudari, C. Balasubramanian, T. M. Bhave, S. V. Bhoraskar, “Experimental images of silicon nanotubes”, Applied Physics Letters 86, 231901 (2005). Paper selected to appear on June 1, 2005 of “Virtual Journal of Nanoscale Science & Technology“.

[4] P. Castrucci, M. Scarselli, M. De Crescenzi, M. Diociaiuti, P. Chistolini, M. A. El Khakani, F. Rosei, “Packing-induced electronic structure changes in bundled single-wall carbon nanotubes”, Applied Physics Letters 87, 103106 (2005).

Comments

3 Responses to “Prof. Maurizio De Crescenzi”

  1. The Nast Centre : The NAST Directory on September 17th, 2007 7:56 pm

    [...] Prof. Maurizio DE CRESCENZI [...]

  2. The Nast Centre : 03/04/2007, Photocurrent Generation in Nanostructures: Carbon Nanotubes and Germanium Quantum Dots on September 20th, 2007 5:43 pm

    [...] Prof. Maurizio De Crescenzi [...]

  3. The Nast Centre : Ultra-high dense growth of germanium nanodots on SiO2 thin films on December 13th, 2007 5:43 pm

    [...] Information contact: Prof. M. De Crescenzi Virtual Journal of Nanoscale Science & [...]

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